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2SK2009TE85LF MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V

Shenzhen Hefengxin Technology Co., Ltd.
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    Buy cheap 2SK2009TE85LF MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V from wholesalers
     
    Buy cheap 2SK2009TE85LF MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V from wholesalers
    • Buy cheap 2SK2009TE85LF MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V from wholesalers
    • Buy cheap 2SK2009TE85LF MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V from wholesalers
    • Buy cheap 2SK2009TE85LF MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V from wholesalers
    • Buy cheap 2SK2009TE85LF MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V from wholesalers

    2SK2009TE85LF MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V

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    Brand Name : Toshiba
    Model Number : 2SK2009TE85LF
    Price : USD 0.01-20/piece
    Payment Terms : T/T
    Delivery Time : 5-8 work days
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    2SK2009TE85LF MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V

    Manufacturer: Toshiba
    Product category: MOSFET
    Technology: si
    Installation style: SMD/SMT
    Package/box: SOT-346-3
    Transistor polarity: N-Channel
    Number of channels: 1 Channel
    Vds- Drain-source breakdown voltage: 30 V.
    Id- continuous drain current: 200ma
    Rds On- drain-source on resistance: 2 Ohms
    Vgs-gate-source voltage: - 20 V,+20 V
    Vgs th- gate-source threshold voltage: 1.5 v.
    Minimum operating temperature:-55 C.
    Maximum operating temperature:+150 C.
    Pd- power dissipation: 200mw
    Channel mode: Enhancement
    Package: Reel
    Package: cuttape
    Encapsulation: MouseReel
    Trademark: Toshiba
    Configuration: Single
    Forward transconductance-minimum: 100 mS
    Height: 1.1 mm
    Length: 2.9 mm
    Product type: MOSFETs
    Series: 2SK2009
    Subcategory: Transistors
    Transistor type: 1 N-Channel
    Type: RF Small Signal MOSFET
    Typical closing delay time: 0.12 us
    Typical turn-on delay time: 0.06 us
    Width: 1.5 mm
    Unit weight: 12 mg

    2SK2009.pdf

    Quality 2SK2009TE85LF MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V for sale
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