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2SA1162-GR,LF Pnp Bipolar Junction Transistor 50V 80MHz 150MW

Shenzhen Hefengxin Technology Co., Ltd.
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    Buy cheap 2SA1162-GR,LF Pnp Bipolar Junction Transistor 50V 80MHz 150MW from wholesalers
     
    Buy cheap 2SA1162-GR,LF Pnp Bipolar Junction Transistor 50V 80MHz 150MW from wholesalers
    • Buy cheap 2SA1162-GR,LF Pnp Bipolar Junction Transistor 50V 80MHz 150MW from wholesalers

    2SA1162-GR,LF Pnp Bipolar Junction Transistor 50V 80MHz 150MW

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    Brand Name : Toshiba
    Model Number : 2SA1162-GR,LF
    Price : USD 0.01-20/piece
    Payment Terms : T/T
    Delivery Time : 5-8 work days
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    2SA1162-GR,LF Pnp Bipolar Junction Transistor 50V 80MHz 150MW

    Manufacturer: Toshiba
    Product category: bipolar transistor-bipolar junction transistor (BJT)
    Technology: si
    Installation style: SMD/SMT
    Package/box: SC-59-3
    Transistor polarity: PNP
    Configuration: Single
    Maximum DC collector current: 150 mA
    Maximum collector-emitter voltage VCEO: 50 V.
    Collector-base voltage VCBO: 50 V
    Emitter-base voltage VEBO: 5 V
    Collector-emitter saturation voltage: 100 mV
    Pd- power dissipation: 150 mW
    Gain bandwidth product fT: 80 MHz
    Maximum operating temperature:+125c
    Qualification: AEC-Q101
    Series: 2SA1162
    Package: Reel
    Package: cuttape
    Encapsulation: MouseReel
    Trademark: Toshiba
    Dc collector/basegain hfemin: 70
    Maximum DC current gain hFE: 400
    Product type: BJTs-Bipolar Transistors
    Subcategory: Transistors
    Unit weight: 8 mg

    2SA1162-GR.pdf

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