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SI2306BDS-T1-GE3 Mosfet Ic 30V 4.0A 1.25W 47m Ohm Logic Level Fet

Shenzhen Hefengxin Technology Co., Ltd.
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    Buy cheap SI2306BDS-T1-GE3 Mosfet Ic 30V 4.0A 1.25W 47m Ohm Logic Level Fet from wholesalers
     
    Buy cheap SI2306BDS-T1-GE3 Mosfet Ic 30V 4.0A 1.25W 47m Ohm Logic Level Fet from wholesalers
    • Buy cheap SI2306BDS-T1-GE3 Mosfet Ic 30V 4.0A 1.25W 47m Ohm Logic Level Fet from wholesalers

    SI2306BDS-T1-GE3 Mosfet Ic 30V 4.0A 1.25W 47m Ohm Logic Level Fet

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    Brand Name : Vishay
    Model Number : SI2306BDS-T1-GE3
    Price : USD 0.01-20/piece
    Payment Terms : T/T
    Delivery Time : 5-8 work days
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    SI2306BDS-T1-GE3 Mosfet Ic 30V 4.0A 1.25W 47m Ohm Logic Level Fet

    Manufacturer: Vishay
    Product category: MOSFET
    Technology: si
    Installation style: SMD/SMT
    Package/box: SOT-23-3
    Transistor polarity: N-Channel
    Number of channels: 1 Channel
    Vds- Drain-source breakdown voltage: 30 V.
    Id- continuous drain current: 3.16a.
    Rds On- drain-source on resistance: 47 mOhms.
    Vgs-gate-source voltage: - 20 V,+20 V
    Vgs th- gate-source threshold voltage: 3 V
    Qg- gate charge: 3 nC
    Minimum operating temperature:-55 C.
    Maximum operating temperature:+150 C.
    Pd- power dissipation: 750 mW
    Channel mode: Enhancement
    Trade name: TrenchFET
    Package: Reel
    Package: cuttape
    Encapsulation: MouseReel
    Trademark: Vishay/Siliconix
    Configuration: Single
    Descending time: 6 ns
    Product type: MOSFETs
    Rise time: 12 ns
    Series: SI2
    Subcategory: Transistors
    Transistor type: 1 N-Channel
    Typical closing delay time: 14 ns
    Typical turn-on delay time: 7 ns
    Part number alias: SI2306BDS-T1-BE3 SI2306BDS-GE3-ge3
    Unit weight: 8 mg

    SI2306BDS-T1-GE3.pdf

    Quality SI2306BDS-T1-GE3 Mosfet Ic 30V 4.0A 1.25W 47m Ohm Logic Level Fet for sale
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