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SI2323DS-T1-GE3 MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V

Shenzhen Hefengxin Technology Co., Ltd.
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    Buy cheap SI2323DS-T1-GE3 MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V from wholesalers
     
    Buy cheap SI2323DS-T1-GE3 MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V from wholesalers
    • Buy cheap SI2323DS-T1-GE3 MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V from wholesalers

    SI2323DS-T1-GE3 MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V

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    Brand Name : Vishay
    Model Number : SI2323DS-T1-GE3
    Price : USD 0.01-20/piece
    Payment Terms : T/T
    Delivery Time : 5-8 work days
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    SI2323DS-T1-GE3 MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V

    Manufacturer: Vishay
    Product category: MOSFET
    Technology: si
    Installation style: SMD/SMT
    Package/box: SOT-23-3
    Transistor polarity: p-channel
    Number of channels: 1 Channel
    Vds- drain-source breakdown voltage: 20 V.
    Id- continuous drain current: 4.7 a.
    Rds On- drain-source on resistance: 39 mOhms
    Vgs-gate-source voltage: - 8 V,+8 V
    Vgs th- gate-source threshold voltage: 1 V
    Qg- gate charge: 12.5nc.
    Minimum operating temperature:-55 C.
    Maximum operating temperature:+150 C.
    Pd- power dissipation: 1.25 W
    Channel mode: Enhancement
    Trade name: TrenchFET
    Package: Reel
    Package: cuttape
    Encapsulation: MouseReel
    Trademark: Vishay Semiconductors
    Configuration: Single
    Descending time: 48 ns
    Height: 1.45 mm
    Length: 2.9 mm
    Product type: MOSFETs
    Rise time: 43 ns
    Series: SI2
    Subcategory: Transistors
    Transistor type: 1 P-Channel
    Typical closing delay time: 71 ns
    Typical turn-on delay time: 25 ns
    Width: 1.6 mm
    Part number alias: SI2323DS-T1-BE3 SI2323DS-GE3-ge3
    Unit weight: 8 mg

    SI2323DS-T1-GE3.pdf

    Quality SI2323DS-T1-GE3 MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V for sale
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